Insights into the chemical vapor deposition of GaN using the single-sourceprecursor Me2N(CH2)(3)Ga(N-3)(2): matrix isolation of Ga(N-3)

Authors
Muller, J Bendix, S
Citation
J. Muller et S. Bendix, Insights into the chemical vapor deposition of GaN using the single-sourceprecursor Me2N(CH2)(3)Ga(N-3)(2): matrix isolation of Ga(N-3), CHEM COMMUN, (10), 2001, pp. 911-912
Citations number
15
Categorie Soggetti
Chemistry
Journal title
CHEMICAL COMMUNICATIONS
ISSN journal
13597345 → ACNP
Issue
10
Year of publication
2001
Pages
911 - 912
Database
ISI
SICI code
1359-7345(2001):10<911:IITCVD>2.0.ZU;2-T
Abstract
The investigation of the pyrolysis of the single-source precursor Me2N(CH2) (3)Ga(N-3)(2) 1 by matrix-isolation FTIR spectroscopy revealed monomeric Ga (N-3) as a reactive intermediate.