Ion milling properties of laterally emitting thin-film electroluminescent materials

Authors
Barros, SO Stevens, R Thomas, CB Cranton, W Craven, M
Citation
So. Barros et al., Ion milling properties of laterally emitting thin-film electroluminescent materials, IEEE SEMIC, 14(2), 2001, pp. 173-176
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
ISSN journal
08946507 → ACNP
Volume
14
Issue
2
Year of publication
2001
Pages
173 - 176
Database
ISI
SICI code
0894-6507(200105)14:2<173:IMPOLE>2.0.ZU;2-P
Abstract
A study has been undertaken of the ion milling properties of ZnS:Mn, Y2O3, Si3N4, SiO2, SiOxNy, and Al versus the etching time, the acceleration volta ge, and the angle of incidence of the ion beam, Different ZnS:Mn etched pro files have been fabricated by modifying the angle of incidence; these are i n agreement with the reported simulations.