Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications

A low-power GaAs-based monolithically integrated phototransceiver, consisti ng of a high-gain heterojunction phototransistor (HPT) and a microcavity li ght-emitting diode (MCLED) or a low-threshold vertical-cavity surface-emitt ing laser (VCSEL), is demonstrated, The HPT and MCLED/VCSEL are grown by mo lecular-beam epitaxy in a single step, The phototransistor exhibits a respo nsivity of 60A/W at an input power of 1 muW. The input and output wavelengt hs are 850 and 980 nm, respectively, The MCLED-based phototransceiver exhib its an optical gain of 7dB and power dissipation of 400 muW for an input po wer of 1.5 muW The small signal modulation bandwidth is 80 MHz, On the othe r hand, the VCSEL-based phototransceiver exhibits an optical gain of 10 dB and power dissipation of 760 muW for an input power of 2.5 muW.