Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00.1)

Authors
Park, WI An, SJ Yi, GC Jang, HM
Citation
Wi. Park et al., Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00.1), J MATER RES, 16(5), 2001, pp. 1358-1362
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
16
Issue
5
Year of publication
2001
Pages
1358 - 1362
Database
ISI
SICI code
0884-2914(200105)16:5<1358:MVPEGO>2.0.ZU;2-A
Abstract
High-quality ZnO thin films were grown epitaxially at 250-550 degreesC Al2O 3(00.1) substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for the growth were diethylzinc and oxygen. Growth temperature, one of the important experimental parameters for epitaxial layers, was opti mized. The films grown at 500 degreesC exhibited good crystallinity and str ong ultraviolet absorption and emission. Photoluminescence spectra of the f ilms showed a dominant excitonic emission with a weak deep level emission. More importantly, a strong stimulated emission peak was observed even at ro om temperature.