Electrical conductivity and optical properties of ZnO films annealed in hydrogen atmosphere after chemical vapor deposition

Citation
Y. Natsume et H. Sakata, Electrical conductivity and optical properties of ZnO films annealed in hydrogen atmosphere after chemical vapor deposition, J MAT S-M E, 12(2), 2001, pp. 87-92
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
12
Issue
2
Year of publication
2001
Pages
87 - 92
Database
ISI
SICI code
0957-4522(200102)12:2<87:ECAOPO>2.0.ZU;2-J
Abstract
The d.c. electrical conductivity and optical properties of polycrystalline zinc oxide films (220-450 nm thick) annealed in hydrogen after chemical vap or deposition are investigated. A minimum film resistivity after the anneal ing gives 0.31 Omega cm for the film as-deposited at a substrate temperatur e of 823 K. From the temperature dependence of conductivity, band conductio n is confirmed for the films at temperatures above 250 K. The effect of gra in-boundary scattering is due to thermionic emission of electrons over grai n boundary barriers. At temperatures below 250 K, variable-range hopping tr ansport is found to be dominant. The films are transparent in the wavelengt h range 400 to 1000 nm and have sharp ultraviolet absorption edges at 380 n m. The absorption edge analysis reveals the optical band gap energy for the films to be 3.18-3.23 eV. The Urbach tail analysis gives the width of loca lized states E-e=0.06-0.14eV. (C) 2001 Kluwer Academic Publishers.