The effect of the deposition method on the optical properties of SiO2 thinfilms

Citation
Sa. Khodier et Hm. Sidki, The effect of the deposition method on the optical properties of SiO2 thinfilms, J MAT S-M E, 12(2), 2001, pp. 107-109
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
12
Issue
2
Year of publication
2001
Pages
107 - 109
Database
ISI
SICI code
0957-4522(200102)12:2<107:TEOTDM>2.0.ZU;2-X
Abstract
Three films of SiO2 deposited by three different methods (chemical vapor de position, electron beam evaporation and r.f. sputtering) were studied to sh ow the effect of the method of preparation on the optical constants of the films. Of the three studied films, the film prepared by electron beam gun d eposition showed refractive index values (n) close to the bulk material in the spectral range 300-850 nm. No values for the absorption constant (k) we re determined except for the film prepared by r.f. sputtering, which showed higher k values due to the non-stoichiometric structure of the film. (C) 2 001 Kluwer Academic Publishers.