Three films of SiO2 deposited by three different methods (chemical vapor de
position, electron beam evaporation and r.f. sputtering) were studied to sh
ow the effect of the method of preparation on the optical constants of the
films. Of the three studied films, the film prepared by electron beam gun d
eposition showed refractive index values (n) close to the bulk material in
the spectral range 300-850 nm. No values for the absorption constant (k) we
re determined except for the film prepared by r.f. sputtering, which showed
higher k values due to the non-stoichiometric structure of the film. (C) 2
001 Kluwer Academic Publishers.