B. Gurbulak, The effect of Fe on the absorption spectra in TlGaS2, TlGa0.99Fe0.01S2 andTlGa0.98Fe0.02S2 layer single crystals, PHYS ST S-A, 184(2), 2001, pp. 349-357
TlGaS2, TlGa0.99Fe0.01S2 and TlGa0.98Fe0.02S2 single crystals were grown by
the modified Bridgman Stockbarger method. They did not have cracks and voi
ds on their surface. The absorption measurements were carried out on TlGaS2
, TlGa0.99Fe0.01S2 and TlGa0.98Fe0.02S2 samples in the temperature range 10
-320 K with steps of 10K. The phonon energies calculated for TlGaS2, TlGa0.
99Fe0.01S2 and TlGa0.98Fe0.02S2 are (19.70 +/- 5), (40.2 +/- 5) and (15.1 /- 5) meV, respectively. The first and second defect levels have been found
as 2.423 and 2.569 eV for TlGa0.99Fe0.01S2 and as 2.017 and 2.426 eV for T
lGa0.98Fe0.02S2 at 10 K, respectively.