Evidence for an insulating ground state in high-resistivity icosahedral AlPdRe from the magnetoresistance - art. no. 172202

Authors
Srinivas, V Rodmar, M Poon, SJ Rapp, O
Citation
V. Srinivas et al., Evidence for an insulating ground state in high-resistivity icosahedral AlPdRe from the magnetoresistance - art. no. 172202, PHYS REV B, 6317(17), 2001, pp. 2202
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6317
Issue
17
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010501)6317:17<2202:EFAIGS>2.0.ZU;2-6
Abstract
Magnetoresistance (MR) has been studied between 1.5-8 K in magnetic fields B up to 12 T in icosahedral (i)-AlPdRe samples prepared by two different me thods and with resistance ratios R[ = rho (4 K)/rho (295 K)] from 45-160. T he observed temperature- and field-dependence of the MR could be well descr ibed by variable-range hopping of the Efros-Shklovskii type. The results gi ve compelling empirical evidence for an insulating ground state of i-AlPdRe for R greater than or equal to 45, and suggest that the metal-insulator tr ansition in i-AlPdRe can be monitored by the R value.