Phenomenological model for colossal magnetoresistance in optimally doped manganese perovskites - art. no. 172415

Modeling the conductive channel as a series of ferromagnetic (FM) domain wi th resistivity of rho (FM) and paramagnetic (PM) region with resistivity of rho (PM), we propose a phenomenological equation for resistivity as rho = [1 - f(T,H)]rho (PM) + f(T,H)rho (FM), where f(T,H) is the volume fraction of FM domains. This allows us to account quantitatively for reports of CMR in the optimally doped manganese perovskites. We present temperature-depend ent magnetoresistance data measured in (La1 - xYx)(2/3)Ca1/3MnO3 (x = 0.195 ) and demonstrate that the model yields excellent agreement with experiment s over the whole range covering the high-temperature insulating and the low -temperature metallic regimes. The physical basis for this model is discuss ed on the basis of dynamic phase segregation and the CMR is argued to be or iginated mainly from the application of magnetic fields that accelerates th e growth of the more conductive FM domains.