Conductivity and switching phenomena in Mn-doped perovskite single crystals and manganite thin films - art. no. 174414

For better understanding of the charge-transport mechanisms in perovskite m anganites, along with colossal magnetoresistance (CMR) materials, such as L a1-xSrxMnO3, we study systems with decreased content of Mn ions, such as si ngle crystals of LaGa1-xMnxO3 (0<x<0.5). The conductivity of all the system s in study can be described adequately with a nonadiabatic approximation of the hopping model with the values of the activation energy and resistivity coefficient strongly dependent on the concentration of Mn ions. Nonlinear voltage-current characteristics demonstrated switching to the low-resistivi ty state at high current density in LaGa1-xMnxO3 crystals as well as in CMR films of low crystallinity. We explain the obtained results based on the s mall-polaron-hopping model, taking into account the heating processes and p ercolation effects.