Process effects in deep-submicrometer geometrics are expected to change the
physical organization, or microarchitecture, of integrated circuits. The f
actor that is expected to primarily impact integrated circuit microarchitec
tures is increasing delays in interconnect. We believe that, to properly mi
croarchitect integrated circuits in small process geometrics, it is necessa
ry to get as detailed a picture as possible of the effects and then to draw
conclusions about changes in microarchitecture. To this end, in this paper
, we describe a comprehensive approach to accurately characterizing the dev
ice and interconnect characteristics of present and future process generati
ons. This approach uses a detailed extrapolation of future process technolo
gies to obtain a realistic view of the future of circuit design. We then pr
oceed to quantify the precise impact of interconnect, including dynamic del
ay due to noise, on the performance of high-end integrated circuit designs.
Having determined this, we then reconsider the impact of future processes
on integrated-circuit design methodology. We determine that local interconn
ect effects can be managed through a deep-submicrometer design hierarchy th
at uses 50K-100K gate modules as primitive building blocks.
In light of this new system-on-a-chip microarchitecture, we then examine gl
obal interconnect issues. Our results indicate that, while global communica
tion speeds will necessarily be lower than local clock speeds. Internationa
l Technology Roadmap for Semiconductors expectations should be attainable t
o the 0.05-m technology generation. Achieving these high clock speeds (10 G
Hz local clock) will be aided by the use of a newly proposed routing hierar
chy that limits interconnect effects at each level of a design (local, isoc
hronous, and global). In addition, key components of the interconnect archi
tecture of the future include fat ( or unscaled) global wires, intelligent
repeater and shield wire insertion, and efficient packaging technologies.