Analyzing and characterizing 193nm resist shrinkage

Authors
Su, B Eytan, G Padmanaban, M Romano, A
Citation
B. Su et al., Analyzing and characterizing 193nm resist shrinkage, SOL ST TECH, 44(5), 2001, pp. 52
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038111X → ACNP
Volume
44
Issue
5
Year of publication
2001
Database
ISI
SICI code
0038-111X(200105)44:5<52:AAC1RS>2.0.ZU;2-C
Abstract
In addition to stability and collapse issues facing 193nm resists, there is concern regarding a decrease in linewidth when exposed to an electron beam during critical dimension measurements. This problem can be observed using any scanning electron microscope. Such an interaction between the measurem ent system and sample materials poses a great challenge in process developm ent for 193nm lithography.