Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si

Authors
Bera, LK Senapati, B Maikap, S Maiti, CK
Citation
Lk. Bera et al., Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si, SOL ST ELEC, 45(3), 2001, pp. 379-383
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
3
Year of publication
2001
Pages
379 - 383
Database
ISI
SICI code
0038-1101(200103)45:3<379:DODADO>2.0.ZU;2-C
Abstract
High quality ultrathin (< 75 Angstrom) oxide and oxynitride films prepared by microwave O-2- and NO-plasma on strained Si (on fully relaxed SiGe buffe r) have been investigated for the determination of trap charge density and distribution using high voltage pulse stressing measurements. The transient current and trap charge distribution in O-2-plasma treated films are compa red with NO- and NO/O-2/NO-plasma grown dielectric films. It has been obser ved that the initial value of trap density for NO/O-2/NO-plasma grown diele ctrics is lower than for NO- and O-2-plasma treated samples. (C) 2001 Elsev ier Science Ltd. All rights reserved.