An improved method for determining the critical energy for interface trap generation of n-MOSFETs under V-g = V-d/2 stress mode

Hot-carrier degradation of n-channel MOSFETs with 4 and 9 nm gate oxides is studied under intermediate gate voltage stress (V-g = V-d/2). An alternati ng injection method is proposed for determining the electron trapping effec t on saturated drain current degradation. On this basis, an improved method for determining the critical energy for interface trap generation is devel oped. It can extract the critical energy more accurately than that through the traditional method. This method is applicable for n-MOSFETs with either thinner or thicker oxides under any stress mode between intermediate (V-g = V-d/2) and higher gate voltage (V-g = V-d). (C) 2001 Elsevier Science Ltd . All rights reserved.