Fabrication and characteristics of Au/PZT/BIT/p-Si ferroelectric memory diode

A ferroelectric memory diode that consisted of Au/PZT/BIT/p-Si multilayer c onfiguration was fabricated. The Pb(ZT(0.52)Ti(0.48))O-3 (PZT) ferroelectri c films with a c-axis oriented Bi4Ti3O12 (BIT) buffer layer were deposited on a p-Si(100) substrate by pulsed laser deposition technique. The ferroele ctric characteristics and the electrical characteristics were measured resp ectively. The results suggested that the growth of the BIT ferroelectric la yer was helpful to increase the memory window and to reduce the current den sity by impairing the serious interaction and interdiffusion at the ferroel ectric/Si interface. The C-V hysteresis loop showed a memory effect due to the ferroelectric polarization of PZT/BIT films. The I-V curve was Schottky -diode-like and had a hysteresis loop due to the ferroelectric remanent pol arization. We confirmed our diode had nonvolatile and nondestructive memory readout operation. After applied a writing voltage of +5 V for logic "1" a nd -5 V for logic "0" respectively, the reading currents were 0.1 and 0.05 muA at a reading voltage of +2 V correspondingly. (C) 2001 Elsevier Science Ltd. AH rights reserved.