Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition

Authors
Wen, TC Lee, WI Sheu, JK Chi, GC
Citation
Tc. Wen et al., Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition, SOL ST ELEC, 45(3), 2001, pp. 427-430
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
3
Year of publication
2001
Pages
427 - 430
Database
ISI
SICI code
0038-1101(200103)45:3<427:COPIGB>2.0.ZU;2-T
Abstract
This study investigates the electrical and optical characteristics of Mg-do ped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-d oped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In m ole fraction increase. The highest hole concentration of bull; Mg-doped Inx Ga1-xN is 1.65 x 10(19) cm(-3). Also, the RT photoluminescence (PL) spectra of Mg related emissions in InxGa1-xN are displayed. However, the PL peak i ntensity becomes weak after the post-annealing process on Mg-doped InxGa1-x N. This degradation might be created by the surface dissociation during the post-annealing process. (C) 2001 Elsevier Science Ltd. All rights reserved .