A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes

Authors
Mu, FC Xu, MZ Tan, CH
Citation
Fc. Mu et al., A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes, SOL ST ELEC, 45(3), 2001, pp. 435-439
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
3
Year of publication
2001
Pages
435 - 439
Database
ISI
SICI code
0038-1101(200103)45:3<435:ANMFDT>2.0.ZU;2-V
Abstract
Hot-carrier effects of n-clannel MOSFETs are investigated under a series of stress modes. A novel method for determining the effect of interface trap generation on device degradation is proposed based on alternating injection technique. Results show that the effect of interface trap generation has a linear relationship with stress mode. This method is useful in device degr adation mechanism study and in lifetime prediction modeling of hot-carrier effects. (C) 2001 Elsevier Science Ltd. All rights reserved.