Comparison of titanium and platinum Schottky barrier heights to Ga0.47In0.53As obtained from Franz Keldysh oscillations and Schottky diode characteristics
N. Shamir et al., Comparison of titanium and platinum Schottky barrier heights to Ga0.47In0.53As obtained from Franz Keldysh oscillations and Schottky diode characteristics, SOL ST ELEC, 45(3), 2001, pp. 475-482
The Schottky barrier height of Ti and Pt contacts to Ga0.47In0.53As was mea
sured using Franz Keldysh oscillations detected by electro absorption modul
ation, and compared to values obtained from the Schottky diode current volt
age characteristics. Both methods reveal that the Schottky barrier height f
or holes in Pt contacts is 50-70 meV lower than in Ti contacts. The obtaine
d barrier heights were used to calculate the specific contact resistance of
Pt and Ti to p-type Ga0.47In0.53As. The results agree well with experiment
al data. A de-correlation method for improving the resolution of electro ab
sorption data analysis is presented. An experimentally obtained correction
factor for the measured electric field is introduced in order to account fo
r a discrepancy between electro absorption theory and experiment. (C) 2001
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