Comparison of titanium and platinum Schottky barrier heights to Ga0.47In0.53As obtained from Franz Keldysh oscillations and Schottky diode characteristics

Authors
Shamir, N Sheinman, B Ritter, D Gershoni, D
Citation
N. Shamir et al., Comparison of titanium and platinum Schottky barrier heights to Ga0.47In0.53As obtained from Franz Keldysh oscillations and Schottky diode characteristics, SOL ST ELEC, 45(3), 2001, pp. 475-482
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
3
Year of publication
2001
Pages
475 - 482
Database
ISI
SICI code
0038-1101(200103)45:3<475:COTAPS>2.0.ZU;2-D
Abstract
The Schottky barrier height of Ti and Pt contacts to Ga0.47In0.53As was mea sured using Franz Keldysh oscillations detected by electro absorption modul ation, and compared to values obtained from the Schottky diode current volt age characteristics. Both methods reveal that the Schottky barrier height f or holes in Pt contacts is 50-70 meV lower than in Ti contacts. The obtaine d barrier heights were used to calculate the specific contact resistance of Pt and Ti to p-type Ga0.47In0.53As. The results agree well with experiment al data. A de-correlation method for improving the resolution of electro ab sorption data analysis is presented. An experimentally obtained correction factor for the measured electric field is introduced in order to account fo r a discrepancy between electro absorption theory and experiment. (C) 2001 Elsevier Science Ltd. All rights reserved.