Investigation of an InGaP/GaAs resonant-tunneling heterojunction bipolar transistor

An interesting InGaP/GaAs resonant-tunneling heterojunction bipolar transis tor incorporating a superlattice (SL) structure in the emitter has been fab ricated and studied. With the n-type doped well, the strongly coupling effe ct dominating the biased SL behaves like a double barrier operation. On the basis of the transfer matrix method, the transport mechanism of sequential miniband conduction can be developed by the theoretical calculation associ ated with the RT in the studied SL structure. Experimentally, the double ne gative differential resistance phenomena are presented both in the two-and three-terminal current-voltage characteristics at 300 K. In addition, excel lent transistor behaviors including the high dc current gain as high as 70, low saturation voltage smaller than 1.2 V, low offset voltage of 110 mV an d high breakdown voltage larger than 20 V are obtained. (C) 2001 Elsevier S cience Ltd. All rights reserved.