On the mobility extraction for HMOSFETs

Authors
Straube, UN Evans, AGR Braithwaite, G Kaya, S Watling, J Asenov, A
Citation
Un. Straube et al., On the mobility extraction for HMOSFETs, SOL ST ELEC, 45(3), 2001, pp. 527-529
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
45
Issue
3
Year of publication
2001
Pages
527 - 529
Database
ISI
SICI code
0038-1101(200103)45:3<527:OTMEFH>2.0.ZU;2-#
Abstract
Self-consistent Schroedinger-Poisson calculations have been employed to inv estigate theoretically the mobility extraction for hetero-MOSFETs or HMOSFE Ts with a thin gate oxide. In this particular case, the contribution of the cap layer to the gate capacitance is crucial. It is shown that there is a considerable error in the effective mobility when extracted with the common constant capacitance approximation and that application of the split-CV me thod is essential. (C) 2001 Elsevier Science Ltd. All rights reserved.