Formation of Al3Hf by Hf ion implantation into aluminum using a metal vapor vacuum arc ion source

The high aluminum content intermetallic compounds DO23-Al3Hf and Ll(2)-Al3H f were directly formed by Hf ion implantation into Al matrix with an averag e current density of 64 muA/cm(2) using a metal vapor vacuum are (MEVVA) io n source at a dose from 3 x 10(17) to 7 x 10(17) ions/cm(2). With increasin g ion dose, the content of the DO23-Al3Hf and Ll(2)-Al3Hf phases increased. At a dose of 7 x 10(17) ions/cm(2), the Hf-aluminides layer was approximat ely 500 nm thick. The surface layer hardness of the sample implanted by Hf ions at a dose of 7 x 10(17) ions/cm(2) was approximately three times large r than that of the aluminum without any Hf ion implantation. (C) 2001 Elsev ier Science B.V. All rights reserved.