SELF-CONSISTENT SIMULATION OF (ALGA)INP GAINP VISIBLE LASERS/

Self-consistent modelling of a 68 Angstrom quantum well separate confi nement heterostructure device lasing at 670 nm has been used to invest igate the variation of threshold current with temperature. The authors have obtained a fit to experimental data using data from the literatu re and calculated that the threshold current at room temperature is 69 8 Acm(-2), 98% of this is recombination in the well and 2% is carrier loss. At 400K, the threshold current density is 2713 Acm(-2), 41% of t his is spontaneous emission in the well, 54% is carrier leakage throug h the p-cladding layer, 3% is spontaneous recombination from the waveg uide core and 1% is non-radiative recombination from the waveguide cor e. The model has also been used to investigate band edge spikes at het erojunctions and the effects of band bending in the well region on the gain/current relation and carrier leakage.