Studies on the feature of Si(111) surface implanted by nitrogen atom, molecule and cluster ions

The measurement and analysis were carried out on the Si(lll) surface implan ted by N-1(+),N-2(+),N-10(+) cluster ions with high doses (1.7 x 10(17) ion s/cm(2)) at 76keV energy using ellipsometry, Fourier-transform infrared (FT -LR) absorption spectroscopy, Xray photoelectron spectroscopy and atomic fo rce microscopy. It was found that the medium layer containing Si-N bond on the surface appeared,and their complex refractive index turned into real;ho wever, at the same implantation dose their surface morphologies were differ ent from each other. Expect for a few pittings, the N-1(+)-implanted surfac e had a best fineness (average roughness R-a approximate to 4.2nm), close t o the unimplanted original surface. The N-2(+)-implanted surface had a blac k dendritic area,and had a poorer fineness (R-a approximate to 16nm). While in the N-10(+)-implanted surface appeared a ripple structure,with the poor est fineness (R-a approximate to 40nm). It was indicated that the roughness of the material surface increased with the ion size and fluence at the hig h energy in contrast to the cluster implantation at the low energy.