Nanometer scale data recording has been achieved on p-nitrobenzonitrile thi
n films using scanning tunneling microscopy. When a series of voltage pulse
is applied between the STM tip and the highly ordered pyrolytic graphite s
ubstrate, structural transition at molecular scale has been observed direct
ly for PNBN thin films. The recording mechanism is attributed to local stru
ctural transition at molecular scale, i.e., from a crystalline state to a d
isordered one. The former corresponds to a high electrical resistance,and t
he latter to a low resistance.