Mixed crystals of II-VI binary compounds with Be chalcogenides give the pos
sibility of tuning of band gap energies and lattice constants of these mate
rials by adjusting Be content in the alloy. For this reason beryllium conta
ining II-VI semiconducting compounds may offer a possibility to achieve a s
ignificant impact on the defect propagation and therefore the increasing of
the laser structure lifetime.
The photoacoustic (Pn) technique was used to investigate the properties of
ZnxBe1-xTe mixed crystals as a function of composition. The differences in
PA spectra of as grown and annealed samples are observed. The Jackson - Ame
r theory and Blonskij et.al. method for piezoelectric detection were used t
o estimate the values of energy gaps and thermal diffusivities.