Photothermal radiometric frequency-swept studies of kinetics process in P-Si wafers

Citation
Me. Rodriguez et al., Photothermal radiometric frequency-swept studies of kinetics process in P-Si wafers, ANAL SCI, 17, 2001, pp. S273-S276
Citations number
11
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
ANALYTICAL SCIENCES
ISSN journal
09106340 → ACNP
Volume
17
Year of publication
2001
Pages
S273 - S276
Database
ISI
SICI code
0910-6340(2001)17:<S273:PRFSOK>2.0.ZU;2-W
Abstract
Frequency-swept (chirped) infrared photothermal radiometry was combined wit h conventional single-frequency modulation of an Ar ion laser beam to yield a quantitative study of the surface-state annealing process induced by the low fluence laser beam on n and p-type Si wafers. The appearance of signal transient was found to be strongly dependent on the electronic quality of the wafer surface and was absent in the thermally oxidized p-si wafer. The low injection carrier minority lifetimes and diffusion coefficient were not affected by the laser-surface interaction, but the front surface recombina tion velocity strongly decreased with the time exposure, in the case of n-S i (positive transient). It was found that in the case of p-Si wafers with n egative transient both carrier-lifetime and front surface recombination vel ocity exhibit changes. A two trap rate model was advanced to explain the po sitive transient behavior in terms of surface-state annealing and carrier i njection.