Photothermal characterization of B-implanted Si (shallow) samples.

3D-Photothermal Radiometry has been used to study the thermoelectronic prop erties of three B+-implanted n-type Si substrates using three different imp lantation energies: 500 keV, 750 keV and 1200 keV. The ion implantation dos e in these samples (1.5x10(13) cm(-2)) was measured using spreading resista nce analysis (SRA). The samples were studied in three different radial posi tions located at the front surface, as well as the same locations on the ba ck surface. According to the experimental data it was possible to establish that PTR semiconductor metrology is able to detect the influence of the im plantation energy in the thermal and electronic transport parameters, such as minority carrier lifetime (tau), front surface recombination velocity (F SRV), carrier diffusion coefficient (D-n) and thermal diffusivity (alpha). It was found that when the implantation energy increases, the FSRV exhibits the same trend. On the other hand, the lifetime values decrease as a funct ion of increasing implantation energy. It was also found that all samples e xhibited transient PTR signal behaviour on both surfaces. The lifetime valu es obtained in the back surface are longer that the values found on the fro nt surface, and the front surface recombination velocity exhibits lower val ues on all back surfaces studied.