Influence of carrier recombination on the thermodiffusion, thermoelastic and electronic strain photoacoustic signal generation mechanisms in semiconductors.

Authors
Marin, E Riech, I Diaz, P Vargas, H
Citation
E. Marin et al., Influence of carrier recombination on the thermodiffusion, thermoelastic and electronic strain photoacoustic signal generation mechanisms in semiconductors., ANAL SCI, 17, 2001, pp. S284-S287
Citations number
10
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
ANALYTICAL SCIENCES
ISSN journal
09106340 → ACNP
Volume
17
Year of publication
2001
Pages
S284 - S287
Database
ISI
SICI code
0910-6340(2001)17:<S284:IOCROT>2.0.ZU;2-N
Abstract
In this paper the Thermodifusion, Thermoelastic and Electronic Strain Compo nents of the photoacoustic signal are calculated for a typical heat transmi ssion configuration, including the effect of different carrier recombinatio n processes. An analytical expression for the total pressure in the PA cham ber is given. The theoretical results were tested by measurements performed in Si samples.