Melting of indium at high pressure determined by monochromatic x-ray diffraction in an externally-heated diamond anvil cell

Citation
Gy. Shen et al., Melting of indium at high pressure determined by monochromatic x-ray diffraction in an externally-heated diamond anvil cell, APPL PHYS L, 78(21), 2001, pp. 3208-3210
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
21
Year of publication
2001
Pages
3208 - 3210
Database
ISI
SICI code
0003-6951(20010521)78:21<3208:MOIAHP>2.0.ZU;2-W
Abstract
The melting behavior of indium at high pressure has been studied in an exte rnally heated diamond anvil cell (DAC) using x-ray diffraction measurements . Melting at high pressure was identified by the appearance of diffuse scat tering from the melt with the simultaneous disappearance of crystalline dif fraction signals. The observed melting curve is in good agreement with prev ious determinations based on resistivity measurements in a piston cylinder apparatus. These results demonstrate the successful melting experiments in a DAC using the x-ray diffuse scattering as the melting criterion. (C) 2001 American Institute of Physics.