Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates

Authors
Sadowski, J Mathieu, R Svedlindh, P Domagala, JZ Bak-Misiuk, J Swiatek, K Karlsteen, M Kanski, J Ilver, L Asklund, H Sodervall, U
Citation
J. Sadowski et al., Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates, APPL PHYS L, 78(21), 2001, pp. 3271-3273
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
21
Year of publication
2001
Pages
3271 - 3273
Database
ISI
SICI code
0003-6951(20010521)78:21<3271:SAMPOG>2.0.ZU;2-P
Abstract
Ferromagnetic GaMnAs containing up to 10% Mn has been grown by migration-en hanced epitaxy at a substrate temperature of 150 degreesC. The lattice cons tant of hypothetical zinc-blende structure MnAs is determined to be 5.90 An gstrom, which deviates somewhat from previously reported values. This devia tion is ascribed to growth-condition-dependent density of point defects. Ma gnetization measurements showed an onset of ferromagnetic ordering around 7 5 K for the GaMnAs layer with 10% Mn. This means that the trend of falling Curie temperatures with increasing Mn concentrations above 5.3% is broken. (C) 2001 American Institute of Physics.