Gallium arsenide crystalline nanorods grown by molecular-beam epitaxy

Gallium arsenide (GaAs) crystalline nanorods were grown by molecular-beam e pitaxy (MBE). Scanning electron microscopy, transmission electron microscop y, and energy dispersive x-ray fluorescence measurements showed that the gr own GaAs nanorods were straight single crystals with diameters between 70 a nd 80 nm, lengths of up to 5 mum, and were doped with Si impurity. The form ation mechanism of the Si-doped GaAs crystalline nanorods is described. The se results indicate that Si-doped GaAs crystalline nanorods can be grown by using the MBE technique and that the nanorods hold promise for potential a pplications in next-generation electronic and optoelectronic devices. (C) 2 001 American Institute of Physics.