Direct three-dimensional patterning using nanoimprint lithography

Citation
Mt. Li et al., Direct three-dimensional patterning using nanoimprint lithography, APPL PHYS L, 78(21), 2001, pp. 3322-3324
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
21
Year of publication
2001
Pages
3322 - 3324
Database
ISI
SICI code
0003-6951(20010521)78:21<3322:DTPUNL>2.0.ZU;2-1
Abstract
We demonstrated that nanoimprint lithography (NIL) can create three-dimensi onal patterns, sub-40 nm T-gates, and air-bridge structures, in a single st ep imprint in polymer and metal by lift-off. A method based on electron bea m lithography and reactive ion etching was developed to fabricate NIL molds with three-dimensional protrusions. The low-cost and high-throughput nanoi mprint lithography for three-dimensional nanostructures has many significan t applications such as monolithic microwave integrated circuits and nanoele ctromechanical system. (C) 2001 American Institute of Physics.