Dewetting of resist/metal bilayers in resist stripping processes

Citation
Yh. Wu et al., Dewetting of resist/metal bilayers in resist stripping processes, APPL PHYS L, 78(21), 2001, pp. 3361-3363
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
21
Year of publication
2001
Pages
3361 - 3363
Database
ISI
SICI code
0003-6951(20010521)78:21<3361:DORBIR>2.0.ZU;2-A
Abstract
We report the observations of dewetting of resist/metal bilayers in a resis t stripping process of nanofabrication in O-2 plasma. The initiation of the dewetting process is tentatively associated with local heating caused by s urface plasmon induced in metallic nanoparticles or nanowires. The surface patterns thus formed differ substantially from all the dewetting patterns r eported so far, and they resemble trees at micrometer scale. The possible m echanism for the formation of this kind striking patterns is discussed and its implication to future nanoelectronics manufacturing is addressed. (C) 2 001 American Institute of Physics.