S. Gredelj et al., Characterization of aluminium surfaces with and without plasma nitriding by X-ray photoelectron spectroscopy, APPL SURF S, 174(3-4), 2001, pp. 240-250
Substrates of aluminium alloy 2011 have been plasma nitrided using an induc
tively coupled plasma source and then characterised by X-ray diffraction (X
RD) and X-ray photoelectron spectroscopy (XPS). The XRD analysis confirmed
the presence of a crystalline aluminium nitride (AlN) layer on the substrat
es surfaces. Both AlN and Al2O3 were observed by XPS on the surface of the
nitrided Al substrates. The binding energy (BE) of the C 1s photoelectron o
f adventitious hydrocarbon was found to be dependent on the thickness of th
e insulating AlN/Al2O3 surface layer. None of the Al 2p, N 1s or O 1s BEs s
howed any shifts due to surface charge build up. The BE values of the Al 2p
photoelectron for AlN, Al2O3 and metallic Al were determined to be 74.5, 7
5.5 and 72.7 eV. respectively.
The charge shifting of the BEs of all the photoelectrons occurs simultaneou
sly only for oxidised Al substrates (not nitrided) with a sufficiently thic
k oxidised surface layer. For a thinner oxidised surface layer the adventit
ious hydrocarbon C 1s photoelectron BE still shows charge shifting but this
is not reflected in the BE of the Al 2p and O 1s XPS components. (C) 2001
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