The interface formation in a ITO-coated glass/triphenylene hexaether/peryle
ne tetraester/aluminum heterostructure was studied by ultra-violet photoemi
ssion spectroscopy (UPS). The interfaces were built step by step by success
ive evaporation of thin (few nm) material layers. Each step was followed by
UPS characterization which allowed determination of the evolutions of the
valence bands (VBs) and that of the vacuum level. An electronic energy diag
ram has been deduced giving the metal/organic barriers and the band offset
between the two organic semiconductors. Major differences were observed bet
ween the two metal/organic interfaces which can have consequences for light
emitting diodes based on these materials. (C) 2001 Elsevier Science B.V. A
ll rights reserved.