SIMULATION OF SUBLIMATION GROWTH OF SIC SINGLE-CRYSTALS

Modelling of sublimation growth of SiC is discussed with the goal to d escribe the mathematical models necessary to optimize the process and design of the growth system. An analysis of the mechanisms of growth o f bulk silicon carbide crystals is performed. Growth conditions which provide stable growth of single SiC crystals without formation of seco ndary phases are considered. The phase diagram of the formation of ext ra phases during the sublimation growth of SiC is presented. Modelling of the growth of bulk SiC crystals is considered. Results of modellin g the temperature distribution inside the inductively heated system fo r the growth of bulk SiC crystals are shown. A mechanism of material t ransport inside the closed Ta container in the absence of an inert gas atmosphere is proposed which is different from that of diffusive or f ree-molecular transport. First results of the model analysis of chemic al processes inside the volume of SiC powder during the sublimation gr owth are demonstrated. It is shown that the sublimation and re-crystal lization of the Sic source is sensitive to the temperature distributio n in the source.