HOMOEPITAXIAL VPE GROWTH OF SIC ACTIVE LAYERS

SiC active layers of tailored thickness and doping form the heart of a ll SIC electronic devices. These layers are most conveniently formed b y vapor phase epitaxy (VPE). Exacting requirements are placed upon the SiC-VPE layers' material properties by both semiconductor device phys ics and available methods of device processing. In this paper, the cur rent ability of the SiC-VPE process to meet these requirements is desc ribed along with continuing improvements in SiC epitaxial reactors, pr ocesses and materials.