GROWTH OF SIC BY HOT-WALL CVD AND HTCVD

A reactor concept for the growth of high-quality epitaxial SiC films h as been investigated. The reactor concept is based on a hot-wall type susceptor which, due to the unique design, is very power efficient. Fo ur different susceptors are discussed in terms of quality and uniformi ty of the grown material. The films are grown using the silane-propane -hydrogen system on off-axis (0001) 6H-and 4H-SiC substrates. Layers w ith doping levels in the low 10(14) cm(-3) showing strong free exciton emission in the photoluminescence spectra may readily be gown reprodu cibly in this system. The quality of the grown layers is also confirme d by the room temperature minority carrier lifetimes in the microsecon d range and the optically detected cyclotron resonance data which give mobilities in excess of 100000 cm(2)/Vs at 6 K. Finally, a brief desc ription will be given of the HTCVD technique which shows promising res ults in terms of high quality material grown at high growth rates.