HETEROINTERFACE CONTROL AND EPITAXIAL-GROWTH OF 3C-SIC ON SI BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Heterointerface modification and epitaxial growth of 3C-SiC on Si by g as source molecular beam epitaxy (MBE) are surveyed. A Si surface was carbonized by the use of C2H2, thermal cracking of C3H8, and dimethylg ermane (CH3)(2)GeH2 (DMGe) to chemically convert the surface region in to single crystalline 3C-SiC prior to crystal growth. It was found tha t a Si surface can be carbonized reproducibly by the use of hydrocarbo n radicals at a temperature as low as 750 degrees C. The initial stage of carbonization is discussed based on the time-resolved reflection h igh-energy electron diffraction analysis. Low-temperature heterointerf ace modification by DMGe is described. As an advanced epitaxial growth , atomic-level control in SIC crystal growth by gas source MBE is give n. Crystallinity and surface morphology of low-temperature 3C-SiC homo epitaxy on a carbonized layer is presented.