SURFACE STUDIES ON SIC AS RELATED TO CONTACTS

Authors
Citation
Mj. Bozack, SURFACE STUDIES ON SIC AS RELATED TO CONTACTS, Physica status solidi. b, Basic research, 202(1), 1997, pp. 549-580
Citations number
116
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
202
Issue
1
Year of publication
1997
Pages
549 - 580
Database
ISI
SICI code
0370-1972(1997)202:1<549:SSOSAR>2.0.ZU;2-L
Abstract
We review the current status of surface studies on SiC as related to d evelopment of metal-semiconductor contacts, focusing on ten selected a spects of work through 1996. The ten areas include high resolution mic roscopy, XPS core-level binding energies versus temperature, surface g raphitization, plasmon-loss features, work function and electron affin ity, sputtering, etching, surface preparation and cleaning, surface st ates, and the index of interface behavior for SiC. Special considerati on is given to the Ni/SiC ohmic contact system, and we discuss possibl e future directions in SiC contact surface research.