A new approach to In2O3 layers from the single-source precursors [Et-2 InOH center dot Et-2 InNH2] and [(Pr2InOH)-Pr-i center dot (Pr2InNH2)-Pr-i]

Authors
Lobinger, P Park, HS Hohmeister, H Roesky, HW
Citation
P. Lobinger et al., A new approach to In2O3 layers from the single-source precursors [Et-2 InOH center dot Et-2 InNH2] and [(Pr2InOH)-Pr-i center dot (Pr2InNH2)-Pr-i], CHEM VAPOR, 7(3), 2001, pp. 105-109
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
7
Issue
3
Year of publication
2001
Pages
105 - 109
Database
ISI
SICI code
0948-1907(200105)7:3<105:ANATIL>2.0.ZU;2-0
Abstract
In2O3 films have been grown on polycrystalline Al2O3 using low-pressure met al-organic (LP-MO) CVD in the temperature range 250-400 degreesC with the n ew single-source precursors [Et2InOH . Et2InNH2] (1) and [(Pr2InOH)-Pr-i . (Pr2InNH2)-Pr-i] (2), using a purified nitrogen stream as the carrier gas. The preparation and properties of compounds 1 and 2 are reported. X-ray dif fraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible (UV -vis) spectroscopy, and energy dispersive X-ray (EDX) spectrometric analyse s were used to characterize the films.