CVD of Ag-I complexes with tertiary phosphines and perfluorinated carboxylates - A new class of silver precursors

C2F5COOAgPMe3 (1) and C2F5COOAg (2) have been used as precursors for the CV D of silver layers in the temperature range 493-623 K. The thin films obtai ned were characterized using X-ray diffraction (XRD), scanning electron mic roscopy (SEM), scanning tunneling electrochemical microscopy (STEM), X-ray photoelectron spectroscopy (XPS), and temperature variable infrared (IR) me asurements. The SEM images of Ag films grown from 2 exhibited a surface wit h a grain size in the range 0.4-1.5 mum, whereas from 1 the size was simila r to0.1 mum. This was confirmed by the STEM studies. The better stability o f 1 in the vapor phase was proved by temperature variable IR spectra (373-5 23 K). Mass spectrometry (MS) images confirmed the presence of the monomeri c and dimeric species, and the recombination ions transported in vapors. Th e XPS image analysis of the silver layers revealed the presence of some car bon impurities. The films demonstrated good adhesion to silicon substrates.