MOCVD of silver thin films from the (1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)silver[bis (trimethyisilyl) acetylene] complex

Authors
Citation
Km. Chi et Yh. Lu, MOCVD of silver thin films from the (1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)silver[bis (trimethyisilyl) acetylene] complex, CHEM VAPOR, 7(3), 2001, pp. 117-120
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
7
Issue
3
Year of publication
2001
Pages
117 - 120
Database
ISI
SICI code
0948-1907(200105)7:3<117:MOSTFF>2.0.ZU;2-K
Abstract
A series of silver compounds of empirical formula (beta -diketanato)Ag(BTMS A) (where BTMSA is bis(trimethylsilyl) acetylene) were prepared from reacti ons of Ag2O with beta -diketone in the presence of BTMSA. All these compoun ds were characterized by elemental analyses, nuclear magnetic resonance (NM R), and infrared (IR) spectroscopic methods. X-ray diffraction (XRD) analys is of the crystal structure of (Btfac)Ag(BTMSA) shows a monomeric silver sp ecies in the solid state. Hot-wall CVD experiments revealed that pure silve r thin films can be deposited by using (hfac)Ag(BTMSA) as the precursor in the temperature range 150-250 degreesC.