Numerical modeling of a microwave plasma CVD reactor

Authors
Gorbachev, AM Koldanov, VA Vikharev, AL
Citation
Am. Gorbachev et al., Numerical modeling of a microwave plasma CVD reactor, DIAM RELAT, 10(3-7), 2001, pp. 342-346
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
342 - 346
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<342:NMOAMP>2.0.ZU;2-1
Abstract
This paper presents the results of numerical simulation of a microwave CVD reactor operating in CW and pulsed regimes. Dependencies of discharge param eters on the hydrogen pressure and microwave power have been studied. The p ossibility to use the pulse-periodic regime of discharge for deposition of diamond films has been analyzed. It is shown that a pulsed discharge may be used to improve the quality and increase the growth rate of the films. (C) 2001 Elsevier Science B.V. All rights reserved.