Analysis of diamond nucleation on molybdenum by biased hot filament chemical vapor deposition

Citation
Wl. Wang et al., Analysis of diamond nucleation on molybdenum by biased hot filament chemical vapor deposition, DIAM RELAT, 10(3-7), 2001, pp. 383-387
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
383 - 387
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<383:AODNOM>2.0.ZU;2-B
Abstract
The nucleation and initial growth of diamond on molybdenum using biased hot filament chemical vapor deposition were investigated by scanning electron microscopy, Raman spectroscopy and adhesion force tests. The studies showed that the negative biased pre-treatment greatly enhanced the nucleation den sity and adhesion force of diamond films on molybdenum. The experimental ev idence was confirmed that there is large stress near the interface between the diamond and the Mo substrate, which were originated from the disordered graphite phases and molybdenum carbide near the interface. This may play a n important role during nucleation stage. However, larger stress can cause the degradation of the adhesion force of diamond films on Mo substrate. How ever, the adhesion force was enhanced with increasing bias voltage. The the oretical relationship between the adhesion force and the bias voltage is gi ven by theoretical calculation. (C) 2001 Elsevier Science B.V. All rights r eserved.