Hydrogen-acceptor interactions in diamond

Hydrogen-acceptor interactions are investigated in boron-doped diamond thro ugh deuterium diffusion experiments followed by SIMS measurements and throu gh infrared absorption spectroscopy. From deuterium diffusion, we show that B-D interactions can be properly demonstrated in low compensation B-doped homoepitaxial layers. However, the presence of defects in such layers stron gly affects this interaction. The degree of passivation of boron accepters by deuterium depends on the diffusion temperature. At 550 degreesC or below , the B and D concentrations exactly match giving rise to a complete disapp earance of the absorption bands related to the electronic transitions of ne utral baron accepters. Under thermal annealing above 500 degreesC, (B,D) pa irs dissociate and neutral boron accepters recover. At deuterium diffusion temperatures of 700 degreesC, the B passivation is absent. (C) 2001 Elsevie r Science B.V. All rights reserved.