Ion channeling studies of hydrogen in homoepitaxially grown CVD diamond

Citation
C. Haug et al., Ion channeling studies of hydrogen in homoepitaxially grown CVD diamond, DIAM RELAT, 10(3-7), 2001, pp. 411-415
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
411 - 415
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<411:ICSOHI>2.0.ZU;2-P
Abstract
Using ion channeling measurements in conjunction with the resonant H-1(N-15 ,alpha gamma)C-12 nuclear reaction or with proton Rutherford backscattering spectrometry we studied the incorporation of hydrogen from the plasma into homoepitaxial (100) and (111) CVD diamond films. The measured hydrogen con centration and the structural defect density of the diamond lattice derived from proton channeling yields were observed to be correlated. Hydrogen lat tice location studies for different incident ion channeling directions show ed no dominant fraction of H occupying either one of the two theoretically predicted sites. These results suggest that in CVD films with quite high di slocation densities and relative H concentrations above 10(-3), hydrogen is predominantly incorporated at structural defect sites uncorrelated with th e lattice symmetry. (C) 2001 Elsevier Science B.V. All rights reserved.