EPR study of preferential orientation of crystallites in N-doped high quality CVD diamond

Citation
S. Nokhrin et al., EPR study of preferential orientation of crystallites in N-doped high quality CVD diamond, DIAM RELAT, 10(3-7), 2001, pp. 480-484
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
480 - 484
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<480:ESOPOO>2.0.ZU;2-B
Abstract
The directions of preferential growth of free-standing optical-quality CVD diamond wafers have been investigated with the help of electron paramagneti c resonance (EPR). EPR signals of the well-known P1 centre (substitutional nitrogen) have been used as a probe. A computer simulation of EPR spectra o f preferentialty oriented polycrystalline material allows the estimation of the real orientation and spatial distribution of crystallographic axes of crystallites in the samples oriented preferentially in the [110] direction. (C) 2001 Elsevier Science B.V. All rights reserved.