Nitrogen incorporation in CVD diamond

Authors
Iakoubovskii, K Adriaenssens, GJ Vohra, YK
Citation
K. Iakoubovskii et al., Nitrogen incorporation in CVD diamond, DIAM RELAT, 10(3-7), 2001, pp. 485-489
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
485 - 489
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<485:NIICD>2.0.ZU;2-Q
Abstract
Photoluminescence, optical absorption and electron spin resonance results a re reported for diamond films homoepitaxially grown by chemical vapor depos ition on (100)-oriented natural IIa diamond. Measured dependencies of the c orresponding signals on the growth temperature in the range 950-2100 degree sC suggest that, while most of nitrogen is present in our films as single a toms, a small part (approx. 10(-3) of all nitrogen) could be incorporated a s N-2 molecules. (C) 2001 Elsevier Science B.V. All rights reserved.