Characterization of diamond fluorinated by glow discharge plasma treatment

Citation
Sf. Durrant et al., Characterization of diamond fluorinated by glow discharge plasma treatment, DIAM RELAT, 10(3-7), 2001, pp. 490-495
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
3-7
Year of publication
2001
Pages
490 - 495
Database
ISI
SICI code
0925-9635(200103/07)10:3-7<490:CODFBG>2.0.ZU;2-Q
Abstract
The surface fluorination of diamond by treatment in glow discharge plasmas of CF4 for different times has been investigated. High quality diamond film s were deposited onto silicon substrates using hot filament chemical vapor deposition (HFCVD). Subsequently, the films were exposed to a radiofrequenc y glow discharge plasma of CF4 for times ranging from 5 min to 1 h, The eff ects of the plasma treatment on the surface morphology, diamond quality and elemental composition were investigated using atomic force microscopy (AFM ), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), respectiv ely. Differences in film roughness caused by the plasma treatment were dete cted by AFM and confirmed by scanning electron microscopy (SEM). Raman spec troscopic analyses showed that the original diamond was of high quality and that the bulk of each film was unchanged by the plasma treatment. Analyses using XPS revealed increased surface fluorination of the films at longer t reatment times. In addition, the density of free radicals in the films was probed using electron paramagnetic resonance spectroscopy (EPRS), revealing that untreated diamond possesses an appreciable density of free radicals ( 6 x 10(12) g(-1)) which initially falls with treatment time in the CF4 plas ma but increases for long treatment times. (C) 2001 Elsevier Science B.V. A ll rights reserved.