The surface fluorination of diamond by treatment in glow discharge plasmas
of CF4 for different times has been investigated. High quality diamond film
s were deposited onto silicon substrates using hot filament chemical vapor
deposition (HFCVD). Subsequently, the films were exposed to a radiofrequenc
y glow discharge plasma of CF4 for times ranging from 5 min to 1 h, The eff
ects of the plasma treatment on the surface morphology, diamond quality and
elemental composition were investigated using atomic force microscopy (AFM
), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), respectiv
ely. Differences in film roughness caused by the plasma treatment were dete
cted by AFM and confirmed by scanning electron microscopy (SEM). Raman spec
troscopic analyses showed that the original diamond was of high quality and
that the bulk of each film was unchanged by the plasma treatment. Analyses
using XPS revealed increased surface fluorination of the films at longer t
reatment times. In addition, the density of free radicals in the films was
probed using electron paramagnetic resonance spectroscopy (EPRS), revealing
that untreated diamond possesses an appreciable density of free radicals (
6 x 10(12) g(-1)) which initially falls with treatment time in the CF4 plas
ma but increases for long treatment times. (C) 2001 Elsevier Science B.V. A
ll rights reserved.